1/9 february 2005 n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed application n compact fluorescent lamps (cfls) n switch mode power supplies (ac / dc converters) description the device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and hi gh voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide rbsoa. figure 1: package figure 2: internal schematic diagram table 1: order code table 2: absolute maximum ratings to-92 part number marking package packaging STX13005 x13005 to-92 bulk STX13005-ap x13005 to-92 ap ammopack symbol parameter value unit v ces collector-emitter voltage (v be = 0) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c = 0, i b = 1.5 a, t p < 10ms) v (br)ebo v i c collector current 3a i cm collector peak current (t p < 5ms) 6a i b base current 1.5 a i bm base peak current (t p < 5ms) 3a p tot total dissipation at t c = 25 o c 2.8 w STX13005 high voltage fast-switching npn power transistor rev. 2
STX13005 2/9 table 3: thermal data table 4: electrical characteristics (t case = 25 o c unless otherwise specified) * pulsed: pulsed duration = 300 m s, duty cycle 1.5 %. t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c symbol parameter value unit symbol parameter unit r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 44.6 150 o c/w o c/w symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 700 v v ce = 700 v t j = 125 o c 1 5 ma ma i ceo collector cut-off current (i b = 0 ) v ce = 400 v 1 ma v (br)ebo emitter-base breakdown voltage (i c = 0 ) i e = 10 ma l = 25 mh 9 18 v v ce(sus) * collector-emitter sustaining voltage (i b = 0 ) i c = 10 ma 400 v v ce(sat) * collector-emitter saturation voltage i c = 1 a i b = 200 ma i c = 2 a i b = 500 ma i c = 3 a i b = 750 ma 0.5 0.6 5 v v v v be(sat) * base-emitter saturation voltage i c = 1 a i b = 200 ma i c = 2 a i b = 500 ma 1.2 1.6 v v h fe * dc current gain i c = 1 a v ce = 5 v i c = 2 a v ce = 5 v 10 8 30 24 t s t f resistive load storage time fall time i c = 2 a v cc = 125 v i b1 = - i b2 = 400 ma t p = 30 s (see figure 16) 1.65 260 s ns t s t f inductive load storage time fall time i c = 1 a v clamp = 300 v i b1 = 200 ma v be(off) = -5 v l = 50 mh r bb = 0 (see figure 15) 0.8 150 s ns
STX13005 3/9 figure 3: safe operating area figure 4: output chatacterisctics figure 5: dc current gain figure 6: derating curve figure 7: dc current gain figure 8: collector-emitter saturation voltage
STX13005 4/9 figure 9: base-emitter saturation voltage figure 10: resistive load fall time figure 11: inductive load fall time figure 12: resistive load storage time figure 13: inductive load storage time figure 14: reverse biased safe operating area
STX13005 5/9 figure 15: inductive load switching test circuit table 16: restistive load switching test circuit 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor
STX13005 6/9 dim. mm. min. typ max. a 4.32 4.95 b 0.36 0.51 d 4.45 4.95 e 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 l 12.70 15.49 r 2.16 2.41 s1 0.92 1.52 w 0.41 0.56 v5 o to-92 bulk shipment mechanical data 0102782 c
STX13005 7/9 dim. mm. min. typ max. a1 4.80 t 3.80 t1 1.60 t2 2.30 d 0.48 p0 12.50 12.70 12.90 p2 5.65 6.35 7.05 f1,f2 2.44 2.54 2.94 delta h -2.00 2.00 w 17.50 18.00 19.00 w0 5.70 6.00 6.30 w1 8.50 9.00 9.25 w2 0.50 h 18.50 20.50 h0 15.50 16.00 16.50 h1 25.00 d0 3.80 4.00 4.20 t 0.90 l 11.00 i1 3.00 delta p -1.00 1.00 to-92 ammopack shipment (suffix-ap) mechanical data
STX13005 8/9 table 5: revision history date release change designator 01-jul-2004 1 first release. 11-feb-2005 2 new table on page 1.
STX13005 9/9 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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